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A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channelhigh-electron-mobility-transistors (HEMTs). For GaN channel HEMTs with gate–drain spacing LGD=2.5 μm, the break-down voltage VBR increases from 518 V to 582 V by increasing gate metal height h from 0.2 μm to 0.4 μm. For GaN channel HEMTs with LGD =7 μm, VBR increases from 953 V to 1310 V by increasing h from 0.8 μm to 1.6 μm. The breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region extension. For Al0.4Ga0.6N channel HEMT with LGD =7 μm, VBR increases from 1535 V to 1763 V by increasing h from 0.8 μmto 1.6 μm, resulting in a high average breakdown electric field of 2.51 MV/cm. Simulation and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs, and this method can be utilized in all the lateral semiconductor devices.