论文部分内容阅读
[FeNi(3 nm)/Zn1-xCoxO(3 nm)]2/ZnO(d nm)/[Zn1-xCoxO(3 nm)/Co(3 nm)]2(d=3 and 10) semiconductor junctions were prepared by magnetron sputtering system and photolithography.The spin valve effect was observed in these junctions because the utility of the ferr