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The physical and electrical properties of BF_2~+ implanted polysilicon films subjectedto rapid thermal annealing(RTA)are presented.It is found that the out diffusion of F and itssegregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalousmigration.Fluorine bubbles were observed in BF_2~+ implanted samples at doses of 1×10~(15) and5×10~(15)cm~(-2) after RTA.
The physical and electrical properties of BF_2 ~ + implanted polysilicon films subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion of F and its segregation at polysilicon / silicon oxide interface during RTA are the major causes of Fomalomal migration. Fluorine The results were shown in Fig. 1 and Fig. 2. The results were as follows: BF 2 ~ + implanted samples at doses of 1 × 10 ~ (15) and 5 × 10 ~ (15) cm ~ 2 after RTA.