论文部分内容阅读
对ＴＦＴ器件工艺中的反应性离子刻蚀技术进行了研究，给出了ＴＦＴ器件工艺中常见薄膜刻蚀速率的实验结果，并讨论了掺杂气体（如Ｈ２、Ａｒ等）对刻蚀速率的影响。
Reactive ion etching technology in TFT device process is studied. The experimental results of common thin film etching rate in TFT device process are given. The effects of dopant gases (such as H2 and Ar) on the etching rate influences.