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通过改变制备条件,研究了Ag-SiO_2薄膜中的缺陷对电阻翻转效应的影响.对比不同的热处理实验条件,发现在120℃退火的样品经forming过程后具有稳定的电阻转变特性;另一方面,在Ar/O_2混合气氛下生长的SiO_2具有比在纯Ar下生长的样品更加稳定、重复的电阻转变特性.通过实验分析,表明热处理、电场作用和样品制备气氛可以改变、调节样品中的缺陷分布(Ag填隙原子和氧空位缺陷),从而导致Ag-SiO_2中基于缺陷的导电通道结构的形成和湮灭,提出了提高电阻翻转稳定性的必要条件.
The influence of the defects in the Ag-SiO_2 thin film on the flip-flop effect was investigated by changing the preparation conditions.Compared with the experimental conditions of different heat treatments, the sample annealed at 120 ℃ showed a stable resistance transformation property after the forming process. On the other hand, The SiO_2 grown under the mixed Ar / O_2 atmosphere has a more stable and repeatable resistance transition characteristic than the samples grown under pure Ar.According to the experimental analysis, the heat treatment, electric field and sample preparation atmosphere can be changed to adjust the defect distribution in the sample (Ag interstitials and oxygen vacancy defects), leading to the formation and annihilation of defect-based conductive channel structures in Ag-SiO 2. The necessary conditions for improving the stability of the resistance inversion are proposed.