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实现了InGaAs/InGaAlAs应变补偿量子阱激光器的室温脉冲激射,激射波长为156μm,阈值电流密度小于185kA/cm2,脊波导结构的激光器最低阈值电流为35mA。应变补偿结构的引入使器件的温度特性明显得到改善
At room temperature pulsed lasing of InGaAs / InGaAlAs strain compensated quantum well lasers was achieved with a lasing wavelength of 156 μm and a threshold current density of less than 185 kA / cm 2 and a ridge waveguide structure with a minimum threshold current of 35 mA. The introduction of strain-compensated structures significantly improves the temperature characteristics of the device