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用传输矩阵法研究一维光子晶体G(AB)mC(AB)mH的能带特性及电场分布,结果发现:随着m的增大,在830—883nm波长范围内,光子晶体G(AB)mC(AB)mH禁带中的导带透射率逐渐趋于零,即光被禁止通过,实现全反射镜功能,且随着入射角的增大,光子晶体的禁带逐渐向短波方向移动。随着介质层G、H的折射率增大,光子晶体在833.6—879.1nm波长范围内出现大的禁带,亦实现全反射镜功能。光子晶体G(AB)5C(AB)5H内部存在很强的局域电场,即在光子晶体内传输的光,被强烈局域在禁带范围内,并在缺陷层C处达到极大值,而且随着m的增大,局域强度增强。这些光学传输特性,为研究、设计新型光学器件全反射镜、滤波器等提供指导。
The transfer matrix method was used to study the energy bandgap and electric field distribution of one-dimensional photonic crystal G (AB) mC (AB) mH. The results show that the photonic crystal G (AB) The transmittance of the conduction band in mC (AB) mH band gradually approaches zero, that is, the light is forbidden to pass through to realize the total reflection mirror function. As the incident angle increases, the forbidden band of the photonic crystal gradually moves toward the shortwave. With the increase of the refractive index of the medium layers G and H, the photonic crystal has a large forbidden band in the wavelength range of 833.6-879.1 nm, and also realizes the function of total reflection mirror. There is a strong local electric field inside the photonic crystal G (AB) 5C (AB) 5H, that is, the light transmitted in the photonic crystal is intensely localized in the forbidden band and reaches a maximum value at the defect layer C, And with the increase of m, the local intensity increases. These optical transmission properties provide guidance for the study and design of new types of total reflection mirrors for optical devices, filters and the like.