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采用真空蒸镀法制备厚度400~2100nm、表面均方根粗糙度Rq<6.0nm的Be薄膜。XRD结果表明不同厚度Be薄膜均由hcp结构的(αBe)相组成。当蒸发温度从1243K增加至1403K时,Be原子沉积速率急剧增大,α-Be晶粒平均直径增大近3倍,其择优取向发生显著改变。薄膜表面小岛由不规则的多边形晶粒逐渐转化为棱角分明的六边形晶粒,而横截面形貌始终以柱状晶生长为主,它垂直于基片呈定向排列。此外,理论计算的Be薄膜生长速率与实验测定的结果十分吻合,它与平衡蒸气压成正比,随蒸发温度的升高而呈指数函数关系增大。
A Be film having a thickness of 400~2,100 nm and a root mean square roughness Rq <6.0 nm was prepared by vacuum deposition. XRD results show that Be films with different thicknesses are composed of (αBe) phase with hcp structure. When the evaporation temperature is increased from 1243K to 1403K, the deposition rate of Be atom increases sharply, and the average diameter of α-Be increases nearly 3 times, and its preferred orientation changes significantly. The islands of the film surface are gradually transformed from irregular polygonal grains into angular hexagonal grains, while the cross-sectional morphology is dominated by columnar growth, which is oriented perpendicular to the substrate. In addition, the theoretical calculated Be film growth rate is in good agreement with the experimental results. It is proportional to the equilibrium vapor pressure and increases exponentially with increasing evaporating temperature.