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SED(Surface-ConductonElectron-EmitterDisplay),是表面传导型电子发射器件的简称。作为场致发射型显示器件(FieldEmissionDisplay,FED)技术之一,SED的发展历史可以追朔到1986年,当时,法国的R.Meyer利用半导体及薄膜生长的精细加工电子源技术,在试制的Si基板上加工了尖形的微小发射极阵列,生成场致发光。1996年10月,Canon发表使用MOS结构场致发光部件超微间距薄膜平面阴极FED的论文,并于1997年5月,试作出3.1英寸样品,实现了薄膜平面阴极的FED,这就是SED的雏型。
SED (Surface-ConductonElectron-EmitterDisplay), is a surface conduction electron-emitting device abbreviation. As one of Field Emission Display (FED) technology, the development history of SED can be traced back to 1986 when R. Meyer in France used the fine processing electron source technology of semiconductor and thin film growth. In the trial production of Si The substrate is spiked with tiny emitter arrays to generate electroluminescence. In October 1996, Canon published a paper using a MOS structured field-emitting device, an ultra-pitched thin-film planar cathode FED. In May 1997, a sample of 3.1 inches was made to achieve a FED with a thin-film planar cathode, which is known as SED The prototype.