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采用电子束蒸发技术在石英衬底上制备了ZnO薄膜,以N离子注入的方式及后期退火处理实现N掺杂ZnO薄膜.借助拉曼散射光谱、透射光谱和霍尔测试等手段研究了ZnO:N薄膜的拉曼及光电特性.结果表明:所有样品均呈现ZnO纤锌矿结构,在ZnO:N薄膜拉曼光谱中发现与N相关的振动模式(位于272.5,505.1和643.6cm-1),分析表明N已掺入ZnO薄膜中;霍尔测试表明,通过适当退火处理后,ZnO:N薄膜向p型转变,其空穴浓度为7.73×1017cm-3,迁移率为3.46cm2V-1s-1,电阻率为2.34Ωcm.然而,长期进行霍尔跟踪测试发现ZnO:N薄膜的p型性能随时间并不稳定,结合拉曼散射光谱和第一性原理计算分析认为由于p-ZnO:N薄膜中存在残余压应力,同时薄膜中还出现了易补偿空穴的施主缺陷(N2)O是p型不稳定的根本原因.
ZnO thin films were deposited on quartz substrates by electron beam evaporation, and N-doped ZnO thin films were deposited by N-ion implantation and annealing at the later stage.By means of Raman scattering, transmission spectra and Hall tests, ZnO: N films.The results show that all the samples have ZnO wurtzite structure, and the N-related vibrational modes (at 272.5, 505.1 and 643.6 cm -1) are found in the Raman spectra of ZnO: N thin films, The results show that N has been incorporated into the ZnO thin film. The Hall test shows that the ZnO thin film has a p-type structure with a hole density of 7.73 × 10 17 cm -3 and a mobility of 3.46 cm 2 V -1s -1 after proper annealing , The resistivity is 2.34Ωcm. However, the long-term Hall-tracking test found that the p-type properties of ZnO: N films are not stable with time. Combined with Raman scattering spectra and first-principles calculations, In the presence of residual compressive stress, while the film also appears easy to compensate for the donor hole defects (N2) O is the fundamental cause of p-type instability.