设计了一个500V纯场限环终端结构。在保证击穿电压的前提下,为了尽可能减小终端结构所占的芯片面积,适当调整场限环终端的结构参数,添加金属场板,形成场限环-场板联合边端结构,界面态电荷对器件性能的影响也得到改善。采用场限环-场板结构的终端,实现了539V的击穿电压,并缩短了17.2μm的边端宽度,相应节省了14%的宽度。 Designed a 500V pure field limit ring terminal structure. Under the premise of ensuring the breakdown voltage, in order to reduce the chip area occupied by the terminal structure as much as possible, the structural parameters of the terminal of the field limiting ring are adjusted appropriately, the metal field plate is added to form a field limiting ring-field plate joint edge structure, the interface The effect of state charge on device performance is also improved. Using a field limiting ring-field structure terminal, a breakdown voltage of 539V was achieved and a side width of 17.2μm was shortened, corresponding to a 14% reduction in width.