晶化点是集成电路金属化工艺中温度过高、合金导电性差的一种征兆,也会导致集成电路出现开路、短路等失效情形。总结了集成电路中晶化点缺陷的形成机理,对产生晶化点的工艺原因进行了探讨,并结合工程案例对晶化点缺陷导致的集成电路失效情形及有关失效机理进行了分析。最后,从工艺上提出若干改进这一缺陷的建议。 Crystallization point is the temperature in the IC metallization process is too high, the conductivity of the alloy is a sign of poor, can lead to open circuit, short circuit and other failure of integrated circuits. The forming mechanism of the crystallization point defect in the integrated circuit is summarized, the process reason of the crystallization point is discussed, and the failure cases and the failure mechanism of the integrated circuit due to the crystallization point defect are analyzed with the engineering case. Finally, a number of proposals were made to improve the process.