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描述了一种波长为1.3μm具有新月形有源区的InGaAsP/InP激光二极管。用两步LPE方法把有源层完全埋在InP层中,并在有源层的两边用两个反向偏置的p-n结实现了双重电流限制的目的。室温CW工作的阈值电流可低达20mA,已获得具有线性输出光功率——电流特性的基横模和单纵模振荡。
An InGaAsP / InP laser diode with a crescent-shaped active region of wavelength 1.3 μm is described. The active layer is completely buried in the InP layer by the two-step LPE method and dual current limiting purposes are achieved by two reverse-biased p-n junctions on both sides of the active layer. The threshold current for CW operation at room temperature can be as low as 20mA and fundamental-mode and single-longitudinal modes with linear output optical power-current characteristics have been obtained.