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随着特征尺寸的不断缩减,器件结电容减少、工作电压降低,使纳米CMOS电路对单粒子效应(SEE)更加敏感,同时伴随着明显的单粒子串扰、多结点翻转等现象,严重影响其工作可靠性。基于纳米CMOS电路在SEE下的可靠性,从基本电离损伤机理、SEE对电路的影响、可靠性评估及抗辐射加固设计等几个方面分析了最新的研究进展,最后指出了几个未来可能研究的焦点,包括:新材料和新结构器件的SEE研究、CMOS电路的抗辐射加固设计研究,特别是抗单粒子瞬态的加固研究及纳米CMOS电路的单粒子闩锁和烧毁机理、仿真及加固研究等。
As the feature size shrinks, the junction capacitance of the device is reduced and the operating voltage is reduced, making the nanocrystalline CMOS circuit more sensitive to the single event effect (SEE), accompanied by obvious single-particle crosstalk and multi-node rollover, which seriously affect its performance Work reliability. Based on the reliability of nanometer CMOS circuit under SEE, the latest research progress is analyzed from the basic ionization damage mechanism, the influence of SEE on the circuit, reliability evaluation and radiation reinforcement design. Finally, several possible future research Including SEE research on new materials and new structural devices, research on radiation hardened design of CMOS circuits, especially research on reinforcement against single-particle transients and single-particle latch-up and burn-down mechanism for nano CMOS circuits, simulation and reinforcement Research and so on.