采用电子束曝光、感应耦合等离子体刻蚀和热氧化等工艺技术,通过独特的图形反转设计,即在电子束曝光时采用负的曝光图形,并以电子束曝光的光刻胶作为掩膜进行干法刻蚀,通过后续的干法热氧化等工艺,在磷离子重掺杂的绝缘体上硅基底上成功地制备出单电子晶体管。该方法具有高精度、结构可控、可重复和加工成本低的优点,可作为一种批量制备单电子晶体管的工艺技术。所制备的单电子晶体管在2.6 K到100 K的温度范围内呈现出明显的库仑阻塞效应,导通电阻小于100 kΩ。该单电子晶体管将成为高速、高灵敏度射频电路的关键器件。 Using electron beam exposure, inductively coupled plasma etching and thermal oxidation and other technology, through a unique graphic inversion design, that is, the electron beam exposure using a negative exposure pattern, and the electron beam exposure of the photoresist as a mask Dry etching, and subsequent dry thermal oxidation processes to successfully fabricate single electron transistors on silicon-on-insulator heavily doped with phosphorus ions. The method has the advantages of high precision, controllable structure, repeatability and low processing cost, and can be used as a process technology for batch preparation of single electron transistors. The prepared single electron transistor shows obvious Coulomb blocking effect in the temperature range of 2.6 K to 100 K, and the on-resistance is less than 100 kΩ. The single-electron transistor will be the key device for high-speed, high-sensitivity RF circuits.