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微细加工技术与高密度器件是超大规模集成电路的两大支柱。微型加工技术大致分为:在抗蚀剂上形成图形的光刻,光刻用的抗蚀剂材料和曝光技术与在抗蚀剂面形上刻蚀掉基片和作为掩膜、薄膜的腐蚀技术。为了提高性能和降低成本,每年元件以大约两倍的趋势向高密度化和大容量化发展。图1表示根据,スライツク公司调查的研究水平和商品水平使用的图形尺寸,和每个片子的元件数的过去实况与将来的预测。到一九八〇年,将达到0.6微米1 M比特位的研究水平和3微米16K比特位的商品水平。
Micro-fabrication technology and high-density devices are the two pillars of VLSI. Micro-processing techniques can be broadly classified into the following: forming a pattern on a resist, using a resist material for lithography and exposure techniques, and etching the substrate on a resist surface and etching the film as a mask technology. In order to improve the performance and reduce the cost, the components are developed to a higher density and a larger capacity with about twice the trend every year. Figure 1 shows the graphical dimensions used according to the research level and commodity level surveyed by Suric Company and the past and future projections of the number of components per wafer. By 1980, there will be a research level of 0.6 Mbit / Mbit and a commercial level of 16 Kbit / 3.