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日本通产省工业技术院电子技术总合研究所于1982年十一月三十日宣布,该研究所已确立了采用同步加速器辐射光照相制版方面在硅片表面的抗蚀膜上,加工线宽0.6微米微细图形的技术。这种技术所得图形的污点量仅为用强 X 射线源的 X 线照相制版方法的二十分之一,可望用于超大规模集成电路(VLSI)等电子器件。作为同步加速器辐射光利用技术开发之一,该所进行了制作超微细的电子线路图形的基础研究,并使用最近完成的六百兆电子伏特电子存储环,进行了同步加速器辐射光
Japan’s MITI Institute of Technology, Institute of Electronic Technology on November 30, 1982 announced that the Institute has established the use of synchrotron radiation photolithography in the surface of the silicon film on the processing line 0.6 microns wide fine pattern of graphics technology. This technique produces a taint of only one-twentieth the size of a strong X-ray source for X-ray lithography and is expected to be used in electronics such as Very Large Scale Integration (VLSI). As one of the synchrotron radiation light utilization technology development, the Institute conducted basic research on the fabrication of ultrafine electronic circuit patterns and performed synchrotron radiation using the recently completed 600 megahertz electron storage ring