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通过测量ＧａＡｓ金属半导体场效应晶体管（ＭＥＳＦＥＴ）的饱和漏－源电流分布研究了深施主缺陷ＥＬ２对半绝缘（ＳＩ）ＬＥＣＧａＡｓ中注入硅（Ｓｉ）激活率的影响，发现激活率随ＥＬ２浓度的增加而增加，讨论了ＥＬ２影响硅注入激活率的机理．
The effect of deep donor defect EL2 on the Si activation rate in semi-insulating (SI) LECGaAs was investigated by measuring the saturation drain-source current distribution of the GaAs metal-semiconductor field-effect transistor (MESFET). It was found that the activation rate increased with increasing EL2 concentration However, the mechanism by which EL2 affects the silicon implant activation rate was discussed.