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用电子束蒸发技术制备出3000-5000A厚,透明导电的锢锡氧化物(ITO)薄膜。这种薄膜的薄层方块电阻是4.5-20Ω/口,在波长为700A时,透光率是80-95％。用x-射线衍射分析测定了薄膜的形貌,测算出它的颗粒度为1-3μ。通过Hall效应测定出薄膜的载流子厚度(N)是3.9×10~(-9)CM~(-3),霍耳迁移率是94cm~2V~(-1)S~(-1),电阻率(P)是4.0×10~(-4)-2×10~(-3)·cm。测得的Hall电压是负值。这说明它是一种n型半导体,与热探针法测得的结果一致。用光学方法计算出薄膜的E_g是3.4ev,该薄膜在制备半导体光伏器件中进行了试用。
3000-5000A thick, transparent conductive indium tin oxide (ITO) thin films were prepared by electron beam evaporation. The thin sheet has a sheet resistance of 4.5-20 ohms / square and a transmission of 80-95% at a wavelength of 700A. The morphology of the film was measured by x-ray diffraction analysis and its particle size was calculated to be 1-3 μ. The Hall effect results show that the carrier mobility is 3.9 × 10 -9 CM -3 and the Hall mobility is 94 cm -2 V -1 S -1. The resistivity (P) is 4.0 × 10 -4 to -2 × 10 -3 cm. The measured Hall voltage is negative. This shows that it is an n-type semiconductor, consistent with the thermal probe method. The E_g of the film was calculated optically to be 3.4 eV, and the film was tested in the preparation of semiconductor photovoltaic devices.