在半导体器件的失效分析中,缺陷定位是必不可少的重要环节。光发射显微镜(PEM)是IC失效定位中最有效的工具之一。PEM利用了IC器件缺陷在一定条件下的发光现象,迅速定位缺陷。而聚焦等离子束(FIB)的定点切割和沉积技术在亚微米级半导体工艺失效分析中扮演着越来越重要的作用。介绍了一种联合使用FIB和PEM进行亚微米级缺陷定位的新方法,使得一些单独使用PEM无法完成缺陷定位的案例得以成功解决。 In the failure analysis of semiconductor devices, defect location is an essential part. Light Emission Microscopy (PEM) is one of the most effective tools for failure detection of ICs. PEM utilizes the luminescence of IC device defects under certain conditions and quickly locates defects. Focus point plasma beam (FIB) of the fixed-point cutting and deposition technology in the sub-micron semiconductor process failure analysis is playing an increasingly important role. A new method of joint sub-micron defect location using FIB and PEM is introduced, which makes it possible to successfully solve some cases where PEM can not locate the defect.