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本文介绍了C波段GaAs微波单片集成低噪声放大器的设计,给出了电路拓扑与版图设计.在3.7～4.2GHz下,研制成的两级放大器噪声系数为1～3.5dB,增益为20dB左右;三级放大器噪声系数为1.6～3.5dB,增益大于30dB.
In this paper, the design of C-band GaAs monolithic integrated LNA is introduced, and the circuit topology and layout design are given. The noise figure of the two-stage amplifier developed at 3.7 ~ 4.2GHz is 1 ~ 3.5dB with a gain of about 20dB ; Three amplifier noise figure of 1.6 ~ 3.5dB, gain greater than 30dB.