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The characteristics of SiCOH low dielectric constant film treated by a trifluromethane (CHF_3) electron cyclotron resonance(ECR) plasma was investigated.The flat-band voltage V_(FB) and leakage current of the Cu/SiCOH/Si structure,and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage,current-voltage and water contact angle.The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy.The CHF_3 plasma treatment of the SiCOH film led to a reduction in both the flat-band voltage V_(FB) shift and leakage current of the Cu/SiCOH/Si structure,a decrease in surface roughness,and a deterioration of the hydrophobic property.The changes in the film's characteristics were related to the formation of Si-F bond,the increase in Si-OH bond,and the C:F deposition at the surface of the SiCOH film.
The characteristics of SiCOH low dielectric constant film treated by a trifluromethane (CHF_3) electron cyclotron resonance (ECR) plasma was investigated. The flat-band voltage V_ (FB) and the leakage current of the Cu / SiCOH / Si structure, of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy.The CHF_3 plasma treatment of the SiCOH film led to a reduction in both the flat-band voltage V_ (FB) shift and leakage current of the Cu / SiCOH / Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. changes in the film's characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C: F deposition at the surface of the SiCOH film.