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利用离化团束(ICB)方法在Si(111)衬底上生长了CN薄膜。X光衍射(XRD)分析表明薄膜呈β-C_3N_4晶态结构,X射线光电子能谱(XPS)测定薄膜含N量为20％,并且观察到C1_s和N1_s芯能级谱中存在双峰。红外吸收光谱呈现C—N和C≡N的吸收峰。高能反射式电子衍射(RHEED)也证实薄膜中存在晶态物质。薄膜的努氏显微硬度值达到6200kgf·mm~(-2)。
CN thin films were grown on Si (111) substrates using an ionized cluster beam (ICB) method. X-ray diffraction (XRD) analysis showed that the film was β-C_3N_4 crystal structure, X-ray photoelectron spectroscopy (XPS) film containing 20% N content, and observed in the C1_s and N1_s core energy spectrum double peak. The infrared absorption spectrum shows C-N and C≡N absorption peaks. High energy reflection electron diffraction (RHEED) also confirmed the presence of crystalline material in the film. Knoop microhardness of the film reached 6200kgf · mm ~ (-2).