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利用白光快速退火设备研究了白光退火特性,得到As通过siO_2注入Si制备0.1～0.15μm无缺陷浅结的最佳条件.发现As通过SiO_2注入的样品退火后其载流子浓度分布出现双峰现象,进而提出了分析这种现象的增强扩散模型.还发现B+As双注入的样品经瞬态退火后消除了减速场.
The white light annealing was used to study the characteristics of white light annealing, and the best conditions for the fabrication of defect-free shallow junctions of 0.1 ~ 0.15μm by As injection from SiO_2 were obtained. As a result, the peak current density , And then put forward the enhanced diffusion model to analyze this phenomenon.It is also found that the B + As double injection of the sample after the transient annealing to eliminate the deceleration field.