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The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400℃ are polycrystalline with (220) preferential orientation. The resistivity decreases as Ta increases until it reaches a value of 25 Ohm-cm for Ta=400℃. The grain size also increases when Ta increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.
The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films was obtained by the spray pyrolysis method at 350 ° C substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400 ° C are polycrystalline with ( 220) preferential orientation. The decrease in resistivity as Ta increases until it reaches a value of 25 Ohm-cm for Ta = 400 ° C. The grain size also increases when Ta increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.