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通过对GaN/Al_xGa_(1-x)N异质结中二维电子气磁输运结果的分析,研究了磁电阻的起因.结果表明,整个磁场范围的负磁电阻是由电子-电子相互作用引起的,而高场下的正磁电阻来源于平行电导的进一步修正.用拟合的方法得到了电子-电子相互作用项以及平行电导层的载流子浓度和迁移率,并用不同的计算方法对拟合结果进行了验证.
The origin of magnetoresistance was studied by analyzing the results of two-dimensional electron gas-gas transport in GaN / Al_xGa_ (1-x) N heterojunction.The results show that the negative magnetoresistance of the entire magnetic field is determined by the electron-electron interaction , While the positive magnetoresistance in high field is derived from the further correction of parallel conductance.The electron-electron interaction term and the carrier concentration and mobility of the parallel conducting layer are obtained by the fitting method and calculated by different calculation methods The fitting results were verified.