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相对于同质结晶体管,异质结双极晶体管(HBT)由于异质结的存在,电流增益不再主要由发射区和基区掺杂浓度比来决定,因此可以通过增加基区掺杂浓度来降低基区电阻,提高频率响应,降低噪声系数,但基区掺杂浓度对器件热特性影响的研究却很少。以多指SiGeHBT的热电反馈模型为基础,利用自洽迭代法分析了基区重掺杂对器件集电极电流密度和发射极指温度的影响。通过研究发现,随着基区浓度的增加,SiGe HBT将发生禁带宽度变窄,基区反向注入发射区的空穴电流增大;同时,基区少子俄歇复合增强,这些都将减小集电极电流密度,降低发射极指温度,从而抑制发射极指热电正反馈,提高器件的热稳定性。
Compared with the homojunction transistor, the heterojunction bipolar transistor (HBT) due to the presence of heterojunction, the current gain is no longer dominated by the emission area and the base doping concentration ratio to determine, so by increasing the base doping concentration To reduce the base resistance, improve the frequency response, reduce the noise figure, but the basic doping concentration on the thermal characteristics of the device are few studies. Based on the multi-finger SiGeHBT thermoelectric feedback model, the self-consistent iterative method was used to analyze the influence of heavily doped base region on the collector current density and emitter finger temperature. The results show that as the concentration of base region increases, the bandgap of SiGe HBT will be narrowed and the hole current injected into the emitter region will increase. Meanwhile, the base Auger recombination will be reduced Small collector current density, reduce the emitter finger temperature, thereby inhibiting the emitter refers to the thermoelectric positive feedback to improve the thermal stability of the device.