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一、序言在大规模集成电路发展史上,MOS 电路一直起主导作用。最先发展的是 PMOS 工艺,1969年已投入生产。但 P 沟电路的载流子迁移率较小,速度较低。n 沟 MOS 工艺,突破了 PMOS 速度的限制,制造出了速度较快的存储器和微处理机。1972年开始批量生产 n 沟硅栅 E/E 型电路(负载 MOS 管为增强型器件)。1974年又采用速度更高的 n 沟硅栅E/D 型(负载 MOS 管为耗尽型器件)电路,其典型产品如2115 1K 静态 RAM,Motorola 公
First, the preface In the history of the development of large-scale integrated circuits, MOS circuits have played a leading role. The first development is the PMOS technology, 1969 has been put into production. However, the P-channel circuit carrier mobility smaller, lower speed. The n-channel MOS process breaks through the limitations of PMOS speed to create faster memories and microprocessors. In 1972 began mass production of n-type silicon gate E / E-type circuit (load MOS tube enhanced devices). In 1974 and the use of higher speed n-type silicon gate E / D type (load MOS tube for the depletion type device) circuit, the typical products such as 2115 1K static RAM, Motorola