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一、工作原理场限环(Field Limiting Ring)是改善硅功率器件电压性能的一项新技术。场限环结在高压器件的主结扩散过程中形成,具有与主结相同的表面杂质浓度及扩散结深,见图1。其作用原理是:当器件主结尚未发生雪崩电压击穿的时候,主结耗尽层就已经扩展到近邻浮置场限环结所在的位置,于是主、环两结的耗尽层相互衔接,在环区附近便有场限环结电场E_环存在。由于E_环与E_主的方向相反,迭加的结果削弱了环间的表面电场强度。而随着外加电压继续升高,耗尽层
First, the working principle Field Ring (Field Limiting Ring) is to improve the silicon power device voltage performance of a new technology. The field-limiting ring junction is formed during the diffusion of the main junction of the high-voltage device and has the same surface impurity concentration and diffusion junction depth as the main junction, as shown in Fig. 1. Its principle of action is that when the main junction of the device has not occurred breakdown of the avalanche voltage, the depletion layer of the main junction has been extended to the position where the adjacent floating field limit junction is located, so the depletion layers of the main and the ring junction connect with each other In the vicinity of the ring there is a field limiting ring E_ ring exists. As the E_ ring and the direction of the main E_ opposite, the result of the superimposed weakening of the surface electric field strength between the rings. With the applied voltage continues to rise, depletion layer