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我们用室温和低温下电场下的光电流谱研究了 GaAs/AlGaAs多量子阱p-i-n 二极管的量子限制斯塔克效应.侧面光照下测量的光电流谱明显地反映出轻重空穴激子峰的偏振效应.对光电流谱和光致发光激发光谱进行对比发现,外加电场不仅影响光吸收,也影响多量子阱中光生载流子的漂移过程.光电流谱的线形用 P~-/n~+结的耗尽模型进行了分析,并计入了入射光强度在光传播过程中由于产生吸收跃迁而发生的衰减.光电流谱峰与激发光谱峰的斯塔克位移提供了多量子阱中电场分布的信息,并证明了耗尽区模型的正确性.
We have investigated the quantum confinement Stark effect of GaAs / AlGaAs multi-quantum well pin diodes by photocurrent spectra at room temperature and at low temperature.The photocurrent spectra measured in the lateral illumination clearly show the polarization of light-heavy hole exciton peaks The comparison between the photo-current spectrum and the photoluminescence excitation spectrum shows that the applied electric field not only affects the light absorption but also affects the drift of photo-generated carriers in the multi-quantum well. Depletion model and account for the attenuation of the incident light intensity as a result of the absorption transition during light propagation.The Stark shift of the photocurrent peak and the excitation peak provides an electric field distribution in the multiple quantum well The information and proved the correctness of the depletion zone model.