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本文对Al_xGa_(1-x)As-GaAs多层量子阱结构的子带间跃迁能的压力关系做了77K低温下的光荧光光谱研究.实验结果表明,未掺杂的量子阱的非本征发光主要来自缺陷的束缚激子d~ox.d~ox束缚激子态在量子阱中的压力系数(5meV/kbar)与体材料中的压力系数(2.7meV/kbar)的比较表明,在量子阱中深中心发生了浅化.通过对不同子带间跃迁能的压力关系测量给出了GaAs Γ谷相应能量点的压力系数,结果表明Γ谷并不是以同一压力系数移动的刚性球.最后测量了量子阱的发光强度随压力的变化.
In this paper, the fluorescence spectra of transitional energies at sub-band of Al_xGa_ (1-x) As-GaAs multi-quantum well structure have been studied at 77K. The experimental results show that the extrinsic A comparison of the pressure coefficient (5 meV / kbar) of the bound exciton d ~ ox.d ~ ox bound bound exciton in the quantum well with the pressure coefficient (2.7 meV / kbar) in the bulk material for the luminescence mainly comes from the defect. The shallow center of the well is shallow.The pressure coefficient of the corresponding energy point of GaAs Γ valley is obtained by measuring the pressure dependence of the transition energy between different subbands and the results show that Γ valley is not a rigid sphere moving with the same pressure coefficient The quantum well luminescence intensity was measured as a function of pressure.