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BiFeO3/PZT multilayer capacitor was prepared on Pt(100) /Ti/SiO2/Si(100) substrate.PZT buffer layer was derived by MOCVD method(label:PZT1) and sputtering method(label:PZT2) respectively.XRD analysis indicated that high(110) orientation of BFO in the BFO/PZT1 structure was achieved.SEM analysis indicated a better microstructure in the BFO/PZT1 structure compared with BFO/PZT2.The remnant polarization of the BFO/PZT1 was 82.5μC/cm2 at an applied voltage of 8 V,compared with that of 25.2μC/cm2 in the BFO/PZT 2 structure.The BFO/PZT1 multilayer exhibited little polarization fatigue(<1.5%) upon 1×101 0switching cycles,at an applied voltage of 4 V.The leakage current density was about 2×10-7A/cm 2 at an applied voltage 4 V,in the BFO/PZT1 capacitor.All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature.
The PZT buffer layer was derived by MOCVD method (label: PZT1) and the sputtering method (label: PZT2) respectively. XRD analysis indicated that high (110) orientation of BFO in the BFO / PZT1 structure was achieved. SEM analysis indicated a better microstructure in the BFO / PZT1 structure compared with BFO / PZT2. the remnant polarization of the BFO / PZT1 was 82.5 μC / cm2 at an applied The voltage of 8 V, compared with that of 25.2 μC / cm2 in the BFO / PZT 2 structure. BFO / PZT1 multilayer impregnated with little polarization fatigue (<1.5%) upon 1 × 10 10 switching cycles, at an applied voltage of 4 V. The leakage current density was about 2 × 10 -7 A / cm 2 at an applied voltage 4 V, in the BFO / PZT 1 capacitor. All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature.