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对不同制备工艺的SIMOX样品，用Raman散射法作了应力测量和比较．结果显示，在1300℃、6小时的退火条件下，整片单次注入／退火与三次注入／退火对样品的应力无明显影响，正面张应力都≤5×103N／cm2．且均匀分布，背面无应力．N2、N2＋1％O2、Ar＋0．5％O2等不同退火气氛对应力也无明显影响．局部注入会在SIMOX样品的顶层硅中产生较高的应力，且在高温长时间退火后背面衬底中还有应力存在．
SIMOX samples of different preparation processes were measured and compared using Raman scattering method. The results show that under the conditions of annealing at 1300 ℃ for 6 hours, the stress of single injection / annealing and triple injection / annealing have no significant effect on the stress of the sample, and the front tensile stress is ≤5 × 103N / cm2. And evenly distributed, no stress on the back. Different annealing atmospheres such as N2, N2 + 1% O2, Ar + 0.5% O2 have no obvious influence on the stress. Local implantation produces a higher stress in the top silicon of the SIMOX sample and there is also stress in the backside substrate after annealing at high temperatures for a long time.