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本文分析了MOS开关器件中的电荷注入。这种分析已经推广到包括信号源阻抗和电容在内的一般情况。给出了注入沟道电荷的百分比通用曲线。为了使该曲线应用起来方便,采用归一化的变量。栅压下降效应,信号源电平效应、衬底掺杂效应、衬底偏置效应、开关尺寸效应以及能源和保持电容统统包括在这些曲线中。小尺寸开关、低的开关速率和小的源电阻可能降低电荷注入效应。发现带有一个单位增益运放的芯片上测试电路是一个开关电荷注入的很好的监视器,它能够将测量仪器所产生的干扰最大限度地减少。理论结果与实验数据相符。
This article analyzes charge injection in MOS switching devices. This analysis has been generalized to include impedance and capacitance of the signal source. A generalized percentage curve of channel charge injection is given. To make the curve easy to use, normalized variables are used. The gate voltage drop effect, the signal level effect, the substrate doping effect, the substrate bias effect, the switching size effect, and the energy and holding capacitance are all included in these curves. Small size switches, low switching rates, and small source resistance may reduce the charge injection effect. The on-chip test circuit with a unity gain op amp is found to be a good monitor for switching charge injection and minimizes the interference from the measuring instruments. The theoretical result is consistent with the experimental data.