论文部分内容阅读
本文研究了离子注入碳的GaN材料的Raman光谱。观察到离子注入碳的GaN在800℃退火后其拉曼光谱在1350和1600cm-1处出现两个峰。分析指出它们很可能分别来自GaN的CN和C=C局域伸缩振动。
In this paper, Raman spectra of GaN implanted with ion-implanted carbon have been studied. It was observed that the Raman spectra of ion-implanted carbon GaN showed two peaks at 1350 and 1600 cm-1 after annealing at 800C. Analysis shows that they are likely to come from CN and C = C localized stretching vibration of GaN, respectively.