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使用国产SiC衬底的GaN HEMT外延材料实现了大功率、高效率的GaN HEMT器件,建立了大信号模型,利用ADS软件建立了GaN MMIC的拓扑,仿真了驱动比对电路性能的影响。仿真结果表明,驱动比由2(电路1)增加到3(电路2),效率提高10%。工艺上分别实现了两种电路,测试表明,效率由25%(电路1)提高到30%(电路2),验证了仿真结果。电路2在测试频率为8～10 GHz时,脉冲输出功率大于21 W,增益大于15 dB,效率大于35%;频率为8 GHz时,输出功率最大值为25 W,效率最大值为45%,具有较好的性能。
The high power and high efficiency GaN HEMT device is realized by using GaN HEMT epitaxial material with domestic SiC substrate. The large signal model is established. The topology of GaN MMIC is established by using ADS software, and the influence of driving ratio on the performance of the circuit is simulated. The simulation results show that the driving ratio is increased from 2 (circuit 1) to 3 (circuit 2), and the efficiency is improved by 10%. Two circuits were implemented on the process, respectively. The tests showed that the efficiency increased from 25% (circuit 1) to 30% (circuit 2), which verified the simulation results. Circuit 2 has a pulse output of more than 21 W, a gain of more than 15 dB and an efficiency of more than 35% at a test frequency of 8 to 10 GHz and a maximum output power of 25 W at a frequency of 8 GHz, with a maximum efficiency of 45% Has better performance.