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利用射频等离子体增强化学气相沉积法,在单晶硅(100)晶面上制备了掺氮氟化类金刚石(FN-DLC)薄膜样品。用傅立叶变换吸收红外光谱(FTIR)、扫描电镜和金相显微镜分析了薄膜的组分和结构及表面形貌。红外分析表明,FN-DLC薄膜中主要有C-Fx(x=1,2,3)、C-C、C-H2、C-H3和C=C化学键等。功率增加时,薄膜内C-C、C=C键含量相对增加,F浓度的相对含量降低,薄膜的粘附性增强。
The films doped with nitrogen-doped fluorinated diamond (FN-DLC) were prepared on the single crystal silicon (100) by radio frequency plasma enhanced chemical vapor deposition. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and optical microscope were used to analyze the composition, structure and surface morphology of the films. Infrared analysis shows that there are mainly C-Fx (x = 1,2,3), C-C, C-H2, C-H3 and C = C bonds in the FN-DLC films. When the power is increased, the content of C-C and C = C bonds in the film increases relatively, the relative content of F concentration decreases, and the adhesion of the film increases.