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非晶硅太阳电池本征层厚度和费米能级位置是影响电池性能的两个重要物理参量.本文从理论上计算出PIN结内建场与本征层厚度和费米能级位置的关系.计算结果表明:为保证光生载流子的有效收集,当隙态密度为10~(17)cm~(-3)eV~(-1)时,本征层最佳厚度为0.5μm,费米能级位置偏离能隙中心不能超过0.2eV.
The intrinsic layer thickness and the Fermi level position of amorphous silicon solar cell are two important physical parameters that affect the performance of the cell.This paper theoretically calculated the relationship between the built-in PIN junction and the intrinsic layer thickness and the position of the Fermi level The calculated results show that for the effective collection of photogenerated carriers, the optimal thickness of intrinsic layer is 0.5μm when the gap density is 10 ~ (17) cm ~ (-3) eV ~ (-1) The deviation from the energy gap center should not exceed 0.2 eV.