几年来,我们遵照伟大领袖毛主席关于“中国人民有志气,有能力,一定要在不远的将来,赶上和超过世界先进水平”的教导,对碲镉汞三元系合金固溶体半导体的晶体生长工艺,特别是定向再结晶工艺进行了一些试验研究工作。碲镉汞三元系合金固溶体,在它的合金固溶体相图中清楚地表明,固相线和液相线偏离较大,因此造成结晶过程的分凝现象非常严重,先冷凝的晶体表面碲化镉的浓度很高,后冷 In the past few years, in accordance with the teachings of Chairman Mao, the great leader, on “the Chinese people have ambition and ability, we must catch up with and surpass advanced world levels in the near future”, we have conducted a study on the crystal of HgCdTe ternary alloy solid solution semiconductor Growth process, especially the directional recrystallization process carried out some experimental research work. HgCdTe ternary alloy solid solution, in its alloy solid solution phase diagram clearly shows that the solid line and the liquid line deviate from the larger, thus causing the crystallization process of the segregation is very serious, the first condensation of the crystal surface telluride Cadmium concentration is high, after the cold