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报导了带有腔面非注入区的 80 8nmGaAs/AlGaAs激光二极管列阵的制作过程和测试结果。在器件前后腔面处引入 2 5μm非注入区 ,填充密度为 17%的 1cm激光二极管列阵最高连续输出功率达 87W ,热沉温度是 2 5℃ ,抗COD能力比没有非注入区的激光二极管列阵高 4 0 %。器件在连续 15W下恒功老化 ,工作寿命超过 50 0 0h。
The fabrication process and test results for an 80 8 nm GaAs / AlGaAs laser diode array with a non-implanted region were reported. In the front and rear of the device, a 25μm non-implanted region was introduced into the device. The maximum output power of the 1cm laser diode array with a packing density of 17% was 87W. The heat sink temperature was 25 ℃. The laser diode with anti-COD capability The array is 40% high. Device in the continuous 15W constant power aging, working life of more than 500h.