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为了获得相变温度低且热致变色性能优越的光学材料,室温下在F:SnO2(FTO)导电玻璃基板表面沉积钨钒金属膜,再经空气气氛下的热氧化处理,制备了W掺杂VO2/FTO复合薄膜,利用X射线光电子能谱、X射线衍射和扫描电镜对薄膜的结构和表面形貌进行了分析.结果表明:高温热氧化处理过程中没有生成W,F,V混合氧化物,W以替换V原子的方式掺杂.与采用相同工艺和条件制备的纯VO2/FTO复合薄膜相比,W掺杂VO2薄膜没有改变晶面取向,仍具有(110)晶面择优取向,相变温度下降到35 C左右,热滞回线收窄到4 C,高低温下的近红外光透过率变化量提高到28%.薄膜的结晶程度明显提高,表面变得平滑致密,具有很好的一致性,对光电薄膜器件的设计开发和工业化生产具有重要意义.
In order to obtain an optical material with low phase change temperature and excellent thermochromism, a W-doped vanadium metal film was deposited on the surface of a F: SnO2 (FTO) conductive glass substrate at room temperature and then subjected to a thermal oxidation treatment in an air atmosphere to prepare a W- VO2 / FTO composite thin films, the structure and surface morphology of the films were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy.The results show that the mixed oxides of W, F and V are not formed during high temperature thermal oxidation Doped with V atoms instead of pure V. Compared with the pure VO2 / FTO composite films prepared by the same process and conditions, the W-doped VO2 thin films did not change the orientation of the crystal planes, and still had the preferred orientation of (110) The temperature changes to about 35 C, the thermal hysteresis loop narrows to 4 C, the transmittance of near-infrared light under high temperature and low temperature increases to 28% .The degree of crystallization of the film is significantly increased, the surface becomes smooth and dense, with a very Good consistency, the design and development of optical thin film devices and industrial production of great significance.