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利用光荧光和x射线双晶衍射分析方法,研究了MBE GaAs/GaP(001)外延层的能带结构和晶格参数。在外延层厚度大于监界厚度的情况下,GaAs外延层主要受到热膨胀系数不同所引起的张应力作用,这种双轴张应力使其晶格参数和能带结构发生变化。
The band structure and lattice parameters of MBE GaAs / GaP (001) epitaxial layers were studied by using the methods of photo-fluorescence and x-ray double crystal diffraction. When the epitaxial layer thickness is greater than the critical thickness, the GaAs epitaxial layer is mainly affected by the tensile stress caused by the different thermal expansion coefficients. The biaxial tensile stress changes the lattice parameters and the band structure.