论文部分内容阅读
采用一种新工艺在Si和Si3 N4衬底上制备了性能优良的氧化钒薄膜 ,并对其微观结构和光电特性进行了研究。测试结果表明采用新工艺所制备的氧化钒薄膜在相变前后电阻率变化达到 3个数量级 ,红外透过率在相变前后改变达到 6 0 %。
A new process was used to prepare vanadium oxide films with good properties on Si and Si3N4 substrates. The microstructure and photoelectric properties of the films were investigated. The test results show that the resistivity of the vanadium oxide film prepared by the new process changes to three orders of magnitude before and after the phase transformation, and the infrared transmittance changes to 60% before and after the phase transformation.