CMOS器件的基础以低功耗和低电压驱动为标志开始活跃的CMOS器件,诞生以后十多年至今,由于引进超LSI技术,其集成化达到与日俱增的程度。特别它是不发热器件,作为超LSI十分引人注目。本讲座想对CMOS器件顺次说明其基本使用方法和各种型号的电气特性,并列举应用电路设计的实例等。对RAM、ROM和逻辑电路等基本CMOS器件以及门阵列和声音合成LSI等作广泛介绍。 CMOS器件的一般构造和特点 CMOS器件的基本构造和CMOS倒相器示于图1。通过在N型衬底上扩散硼等形成p The Basics of CMOS Devices CMOS devices that are active with low-power and low-voltage driving are more than a decade after their introduction, and their integration has been growing ever since the introduction of ultra-LSI technology. In particular, it is a non-heating device, which is very attractive as a super LSI. This lecture attempts to explain the basic use of CMOS devices and various types of electrical characteristics, and examples of application circuit design. The basic CMOS devices such as RAM, ROM and logic circuits, as well as gate arrays and audio synthesis LSIs, are extensively introduced. General Construction and Features of CMOS Devices The basic construction of CMOS devices and CMOS inverters is shown in Figure 1. P is formed by diffusing boron or the like on an N-type substrate