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使用高频感应加热的石墨作为红外热辐射源研究了SI-GaAs中Si注入的快速热退火(RTA)。对快速热退火在缺陷消除方面较常规退火具有的优点进行了讨论。在900～1050℃退火温度范围内,RTA的激活率随温度增加而增加,高剂量时RTA的激活率比SiO_2包封常规退火的高一倍多,载流子浓度可达1.5×10~(18)cm~(-3)。采用Si两次注入获得了性能优良的薄层掺杂材料。这种材料用于器件制造取得了很好的使用结果。
The rapid thermal annealing (RTA) of Si implantation in SI-GaAs was investigated using high frequency induction heated graphite as an infrared heat radiation source. The benefits of rapid thermal annealing over conventional annealing for defect removal are discussed. The activation rate of RTA increased with the increase of temperature at the temperature range of 900 ~ 1050 ℃. The activation rate of RTA at high dose was more than double that of conventional annealing of SiO_2, and the carrier concentration could reach 1.5 × 10 ~ (-1) 18) cm ~ (-3). The Si thin film doped material with excellent performance was obtained by using Si twice. This material has been used for device manufacturing to obtain good results.