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本文叙述了S波段振荡用大功率GaAs FET的设计考虑、结构和制作,给出了器件性能。在3GHz下,器件振荡输出功率为3.34W,直流—射频转换效率为47.4％。
This article describes the design considerations, structures and fabrication of high-power GaAs FETs for S-band oscillation, and gives the device performance. At 3GHz, the device oscillates at 3.34W with a 47.4% DC-RF conversion efficiency.