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用Pb(CH3COO)2·3H2O、Sc(CH3COO)3·xH2O和C10H25O.5Ta为原材料,乙二醇甲醚为溶剂,用改进的溶胶-凝胶(Sol-Gel)法在Pt/Ti/SO2/Si基片上成功地制备出ABO3钙钛矿型结构Pb(Sc1/2Ta1/2)O3(PST)铁电薄膜。该薄膜是研制铁电微型致冷器和非致冷热释电红外焦平面阵列的优选材料。对制备出的PST薄膜进行了介电、铁电和热释电性能测试。测试得到在1kHz下PST薄膜的介电常数为570,介电损耗为0.02。铁电性能良好,剩余板化强度为3.8～6.0μC·cm-2,矫顽场为40～45kV·cm-1。热释电系数为4.0×10-4～20×10-4Cm-2K-1。
The modified sol-gel method was used to synthesize Pt / Ti / SO2 (superscript 2 +) with Pb (CH3COO) 2 · 3H2O, Sc (CH3COO) 3 · xH2O and C10H25O.5Ta as raw materials and ethylene glycol methyl ether as solvent. / Si substrate successfully prepared ABO3 perovskite-type Pb (Sc1 / 2Ta1 / 2) O3 (PST) ferroelectric thin film. The film is the development of ferroelectric micro-refrigerator and non-pyroelectric infrared focal plane array of the preferred material. The fabricated PST films were tested for dielectric, ferroelectric and pyroelectric properties. The test results show that the dielectric constant of the PST film is 570 at 1 kHz and the dielectric loss is 0.02. The ferroelectric properties are good, the residual plate strength is 3.8 ~ 6.0μC · cm-2, and the coercive field is 40 ~ 45kV · cm-1. Pyroelectric coefficient of 4.0 × 10-4 ~ 20 × 10-4Cm-2K-1.