非晶硅薄膜的光学及电学性质与共电子局域态分布紧密相关。为了改进非晶硅薄膜器件的性质,如太阳能电池、薄膜晶体管等,需要低局域态密度的材料,因而测量并了解局域态的性质十分重要。局域态包括带尾态、缺陷态及亚稳缺陷态。本文着重讨论缺陷态及亚稳缺陷态。 The optical and electrical properties of amorphous silicon films are closely related to the distribution of co-electron localized states. In order to improve the properties of amorphous silicon thin film devices, such as solar cells, thin film transistors and the like, materials with low local density of states are needed, and therefore it is very important to measure and understand the properties of the localized states. Local states include tail-end, defect, and metastable defects. This article focuses on the defect states and metastable defect states.