采用磁控溅射法镀制ZnO薄膜,通过椭偏仪和四探针测试仪分析了氧气浓度对薄膜光电性能的影响。结果表明:随着氧分压的增加,薄膜折射率呈变大的趋势,电阻率升高,导电性能降低。 ZnO thin films were deposited by magnetron sputtering. The influence of oxygen concentration on the photoelectric properties of the films was analyzed by ellipsometer and four-probe tester. The results show that with the increase of oxygen partial pressure, the refractive index of the film tends to increase, and the resistivity increases and the conductivity decreases.