本文采用TED、SEM和X光谱分析法研究了在550～750℃范围内用常压CVD法生长非晶硅薄膜的晶化和结构特性。指出了CVD非晶硅的晶化温度是680±10℃。在晶化温度以下的温度范围内,非晶硅的生长激活能为0.44eV;在晶化温度以上多晶硅的生长激活能为1.78eV。在由非晶硅向多晶硅转变过程中存在着具有准无序结构的微晶区域。 In this paper, the crystallization and structural characteristics of amorphous silicon thin films grown by atmospheric CVD at 550-750 ℃ ​​have been studied by TED, SEM and X-ray spectroscopy. It is pointed out that the crystallization temperature of CVD amorphous silicon is 680 ± 10 ° C. The growth activation energy of amorphous silicon is 0.44eV in the temperature range below the crystallization temperature and the growth activation energy of polycrystalline silicon is 1.78eV above the crystallization temperature. During the transition from amorphous silicon to polycrystalline silicon, there exists a microcrystalline region with a quasi-disordered structure.